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| 2SK975 Silicon N-Channel MOS FET Application TO-92 MOD High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device - Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive * * * * 2 12 3 3 1. Source 2. Drain TO-92MOD 3. Gate 1 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch Tch Tstg Ratings 60 20 1.5 4.5 1.5 900 150 -55 to +150 Unit V V A A A mW C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % 2SK975 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(off) Min 60 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 1 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 0.3 0.4 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 0.9 -- -- -- -- -- -- -- -- 1.5 140 70 20 3 12 50 30 0.9 10 100 2.0 0.4 0.55 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 1.5 A, VGS = 0 IF = 1.5 A, VGS = 0, diF/dt = 50 A/s ID = 1 A, VGS = 10 V, RL = 30 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------- --------------------- ID = 1 A, VGS = 4 V * ID = 1 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 45 -- ns -------------------------------------------------------------------------------------- 2SK975 Power vs. Temperature Derating 1.5 Channel Dissipation Pch (W) 10 Maximum Safe Operation Area s s 10 0 10 3 PW 1 Drain Current ID (A) t s ho m 1S s( 0m =1 1.0 1.0 D 0.3 C O pe ) ra tio 0.5 0.1 Operation in this area is limited by RDS (on) 0.03 Ta = 25C n 0 50 100 Case Temperature TC (C) 150 0.01 0.1 0.3 30 100 1.0 3 10 Drain to Source Voltage VDS (V) Typical Output Characteristics 5 10 V 4.5 V Pulse Test 5V 7V 4V Drain Current ID (A) 5 Typical Transfer Characteristics 4 Drain Current ID (A) 4 VDS = 10 V Pulse Test 3 3.5 V 3 2 3V 1 VGS = 2.5 V 2 1 75C 0 -25C TC= 25C 5 0 6 2 4 8 10 Drain to Source Voltage VDS (V) 3 1 2 4 Gate to Source Voltage VGS (V) 2SK975 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) () 1.0 Drain to Source Saturation Voltage VDS (on) (V) 0.8 2A 0.6 Pulse Test 5 Static Drain to Source On State Resistance vs. Drain Current Pulse Test 2 VGS = 4 V 1.0 0.5 0.2 0.1 0.05 0.05 0.4 10 V 1A ID = 0.5 A 0.2 0 6 2 4 8 10 Gate to Source Voltage VGS (V) 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance yfs (S) 1.0 Pulse Test ID = 2 A 1A 0.5 A VGS = 4 V 5 2 1.0 Forward Transfer Admittance vs. Drain Current VDS = 10 V -25C Pulse Test T = 25C C 0.8 0.6 75C 0.5 0.4 VGS = 10 V 2 A 0.5 A 1A 0.2 0.1 0.05 0.05 0.2 0 -40 0 40 120 80 Case Temperature TC (C) 160 0.1 0.2 2 0.5 1.0 Drain Current ID (A) 5 2SK975 Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test Capacitance C (pF) 1000 300 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 100 30 Crss 10 3 1 Coss 200 100 50 20 10 0.05 0.1 0.2 0.5 1.0 2 Reverse Drain Current IDR (A) 5 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) 80 VDD = 50 V 25 V 10 V 60 VDS VDD = 50 V VGS 12 20 Gate to Source Voltage VGS (V) 16 100 Switching Characteristics td (off) 50 Switching Time t (ns) tf 20 10 5 td (on) 2 1 0.05 VGS = 10 V PW = 2 s, duty < 1 % tr 40 20 8 4 25 V 10 V 0 2 ID = 1.5 A 4 6 8 Gate Charge Qg (nc) 0 10 0.1 0.5 1.0 0.2 2 Drain Current ID (A) 5 2SK975 Reverse Drain Current vs. Source to Drain Voltage 2.0 Pulse Test Reverse Drain Current IDR (A) 1.6 10 V 15 V 5V 0.8 0.4 VGS = 0, -5 V 1.2 0 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) |
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